Stacking-Fault Nucleation on Ir(111)

Stacking-fault nucleation on Ir(111).

Variable temperature scanning tunneling microscopy experiments reveal that in Ir(111) homoepitaxy islands nucleate and grow both in the regular fcc stacking and in the faulted hcp stacking. Analysis of this effect in dependence on deposition temperature leads to an atomistic model of stacking-fault formation: The large, metastable stacking-fault islands grow by sufficiently fast addition of ada...

A surface stacking fault energy approach to predicting defect nucleation in surface-dominated nanostructures

We present a surface stacking fault (SSF) energy approach to predicting defect nucleation from the surfaces of surface-dominated nanostructure such as FCC metal nanowires. The approach leads to a criterion that predicts the initial yield mechanism via either slip or twinning depending on whether the unstable twinning energy or unstable slip energy is smaller as determined from the resulting SSF...

Observation of Stacking Fault Tetrahedral in TWIP Steel

Low stacking fault energy face centered cubic (FCC) materials contain characteristic defect structures. Stacking fault tetrahedral are one of those rare structures that occur under special experimental conditions. For the first time, stacking fault tetrahedral were observed in Fe-30Mn-3Al-3Si twinning induced plasticity (TWIP) steel. Their presence resulted from a quenching heat treatment.

Stacking Fault Energies of Tetrahedrally Coordinated Crystals

The energies of the intrinsic stacking fault in 20 tetrahedrally coordinated crystals, determined by electron microscopy from the widths of extended dislocations, range from a few mJ/m to 300 mJ/m. The reduced stacking fault energy (RSFE: stacking fault energy per bond perpendicular to the fault plane) has been found to have correlations with the effective charge, the charge redistribution inde...

Simple model of stacking-fault energies.